Silicon Carbide Multi-Chip Power Module for Traction Inverter Applications: Thermal Characterization and Modeling

Semiconductor power modules are the key hardware components of a traction inverter. It drives motor speed and torque, managing energy exchange from battery to viceversa. The increasing demand for electric hybrid vehicle requests high performance modules. Power semiconductor devices based on wide band gap compound, like silicon carbide (SiC), have excellent electrical properties in terms on-state resistance, stray inductance at commutation frequency. One most promising solution is MOSFET module which each switch made by several different dies placed parallel. Embedded direct cooling system novel materials with conductivity (e.g., active metal brazed substrates) can be considered enhance thermal performance. A robust method needed characterize predict temperature behavior considering importance improve reliability optimize weight dimensions. According parallel inside switch, classic sensitive parameter (TSEP) shall validated measurement. In this framework, it has been reported characterization inverter eight MOSFETs switch. Both TSEP infrared measurements employed. Thermal numerically reproduced, creating simplified equivalent network developing predictive model finite element (FEM).